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3 edition of The hall coefficient of indium in thine evaporated films found in the catalog.

The hall coefficient of indium in thine evaporated films

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Published by Naval Postgraduate School in Monterey, Calif .
Written in English

About the Edition

The Hall coefficent has been measured at liquid helium temperatures in the magnetic field range of 0.08-3.8 kilogauss for evaporated indium films with thicknesses between 900 and 2,500 Angstroms. For all films studied the Hall coefficient was positive; there was no sign reversal of the typer observed in some rolled films at low magnetic fields. The coefficients obtained were slightly smaller than those previously reported for bulk films at comparable values of reduced magnetic field. Below the superconducting critical temperatures in the weak-field region a large and unexpected transverse potential difference, independent of magnetic field direction, was observed. As the magnetic field was incerased, this potential difference reversed sign and underwent damped, aperiodic oscillation in some samples. However, in the higher-field region a normal Hall voltage was present, and the Hall coefficient was in good agreement with the data above the critical temperature.

Edition Notes

StatementThomas Edward Dyer; George Tsantes Jr
ContributionsTsantes, George, Naval Postgraduate School (U.S.)
The Physical Object
FormatElectronic resource
Pagination74 p.
Number of Pages74
ID Numbers
Open LibraryOL25199597M

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The hall coefficient of indium in thine evaporated films by Thomas Edward Dyer Download PDF EPUB FB2

The electrical properties of the films, such as the carrier concentration, Hall mobility, Hall coefficient, and sheet resistance, were characterized by four-point probe and Hall The hall coefficient of indium in thine evaporated films book measurements (HMS Manual Ver ) at room temperature.

Resistivity, r in units of Hall coefficient, R H, is in units of cm 3 /C = m 3 /C = = The motivation for compiling this table is the existence of conflicting values in the " popular" literature in which tables of Hall coefficients are given.

The Hall effect is the production of a voltage difference (the Hall voltage) across an electrical conductor, transverse to an electric current in the conductor and to an applied magnetic field perpendicular to the current. It was discovered by Edwin Hall in For clarity, the original effect is sometimes called the ordinary Hall effect to distinguish it from other "Hall effects" which have.

Abstract: We report the temperature dependence of resistivity (ρ) and Hall coefficient (R H) in the normal state of homogeneously disordered epitaxial NbN thin films with k Fl~ The superconducting transition temperature (T c) of these films varies from K to K.

While. GradeStack Learning Pvt. Ltd. Windsor IT Park, Tower - A, 2nd Floor, SectorNoida, Uttar Pradesh [email protected] Hall coefficient (R H) measurements of moderately doped n-InSb system were carried out at low temperatures (T) down to 18 K. An exponential increase in R. Silver gallium telluride (AgGaTe2) films The hall coefficient of indium in thine evaporated films book prepared by thermal evaporation technique in vacuum of the order of torr.

onto the glass substrate kept The hall coefficient of indium in thine evaporated films book different temperatures. The electrical conductivity, Hall coefficient and carrier con­ centration of these films have been. indium metal. Resistivity and Hall coefficient measurements The Hall specimen was then connected into the circuit shown in Figure 2.

A current of about rnA. was provided through the length of the specimen by four parallel 2t volt railroad batteries. THE HALL EFFECT AND ITS APPLICATIONS By assuming a two-band model with one electron and one hole band, the conductivity of each being independent of the magnetic field, one finds a change of resistivity caused by a transversal magnetic field given by the following expression (5): Ao 1 (a-)(a+> F+ on2 (a- a) (n,' 2 + B,2 _.

40' (a- + a+ Cited by: 1. Abstract. The behaviour of the Hall mobilityμ H and the carrier concentrationn have been investigated on InAs films as a function of thickness, substrate temperature and annealing treatment. While the Hall mobility showed an increasing trend with substrate temperature and thickness for both as-deposited and annealed films, the carrier concentration for asdeposited films showed a maximum at a Author: A.

Sharma, P. Jayarama Reddy. This bar-code number lets you verify that you're getting exactly the right version or edition of a book. The digit and digit formats both work. Scan an ISBN with your phone4/5(10). Definition of film coefficient. The heat transferred by convection per unit area per degree temperature difference between the surface and the fluid.

Also called unit convection conductance; surface coefficient. Ref: Strock, 2. Click here to see list of references, authorities. 1 Observation of Skyrmions at The hall coefficient of indium in thine evaporated films book Temperature in Co 2 FeAl Heusler Alloy Ultrathin Films Sajid Husain 1, Naveen Sisodia, Avinash Kumar Chaurasiya2, 3Ankit Kumar3, Serkan Akansel, Anjan 2Barman, P.

Mudulli1, Peter Svedlindh3, and Sujeet Chaudhary1* 1Thin Film Laboratory, Department of Physics, Indian Institute of Technology Delhi, New Delhi.

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In addition to protecting developing films from exposure to light, the light-tight lid of the processing tank protects the solution from: Oxidation and evaporation A thermometer mat be clipped to the side of the ___ for manual processing. Density is a property of a substance that can be used to help identify it but it is necessary to use references values at the appropriate temperature so that we can compare experimental results.

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